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Número de pieza
componentes Descripción
1SS355 Ver la hoja de datos (PDF) - Nanjing International Group Co
Número de pieza
componentes Descripción
Fabricante
1SS355
Silicon Epitaxial Planar Switching Diode
Nanjing International Group Co
1SS355 Datasheet PDF : 4 Pages
1
2
3
4
1SS355
Forward Characteristics
1
100m
10m
Ta=125 C
Ta=75 C
Ta=25 C
Ta=-25 C
1m
100
10
0
0.4
0.8
1.2
Forward Voltage, V
Capacitance between terminals
characteristics
10
2
1
0.2
0.1
0
4
8
12 14
Reverse Voltage, V
R
( V )
Surge Current Characteristics
100
Pulse
Single Pulse
20
10
2
1
0.1
1
10 100 1000
Pulse Width: Tw (ms)
10000
Reverse Characteristics
1m
0.1m
10
Ta=125 C
1
Ta=75 C
100n
10n
Ta=25 C
1n
0
40
80
120
Reverse Voltage, V
Reverse Recovery Time Characteristics
3
V
R
=6V
I
rr=1/10
I
R
2
1
0
10
20
30
Forward Current (mA)
Reverse Recovery Time Measurement Circuit
0.01 F
DUT
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
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