BAV201 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BAV201 Datasheet PDF : 4 Pages
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BAV200, BAV201, BAV202, BAV203
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
IF = 100 mA
VF
VR = 50 V
BAV200
IR
VR = 100 V
BAV201
IR
VR = 150 V
BAV202
IR
Reverse current
VR = 200 V
BAV203
IR
Tj = 100 °C, VR = 50 V
BAV200
IR
Tj = 100 °C, VR = 100 V
BAV201
IR
Tj = 100 °C, VR = 150 V
BAV202
IR
Tj = 100 °C, VR = 200 V
BAV203
IR
BAV200
V(BR)
60
Breakdown voltage
IR = 100 μA, tp/T = 0.01,
BAV201
V(BR)
120
tp = 0.3 ms
BAV202
V(BR)
200
BAV203
V(BR)
250
Diode capacitance
VR = 0, f = 1 MHz
CD
Differential forward resistance
IF = 10 mA
rf
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA,
RL = 100
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
TYP.
1.5
5
MAX.
1
100
100
100
100
15
15
15
15
50
UNIT
V
nA
nA
nA
nA
μA
μA
μA
μA
V
V
V
V
pF
ns
100
Scattering Limit
10
1
0.1
V =V
R
RRM
100
Tj = 25 °C
10
0.01
0
94 9084
40
80
120 160 200
Tj - Junction Temperature (°C)
Fig. 1 - Reverse Current vs. Junction Temperature
1
0.1
1
10
100
94 9089
IF - Forward Current (mA)
Fig. 3 - Differential Forward Resistance vs. Forward Current
1000
Tj = 25 °C
100
10
Scattering Limit
1
0.1
0
94 9085
0.4
0.8
1.2
1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.7, 31-Jul-12
2
Document Number: 85544
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