BAV21W Ver la hoja de datos (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED
Número de pieza
componentes Descripción
Fabricante
BAV21W Datasheet PDF : 2 Pages
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Plastic-Encapsulate Diodes
FAST SWITCHING DIODES
FEATURES
Fast switching speed
Surface mount package ideally suited for
automatic insertion
MARKING: BAV19W : A8 BAV20W: T2 BAV21W: T3
BAV19W/20W/21W
-
+
SOD-123
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
BAV19W
BAV20W
Non-Repetitive Peak reverse voltage
VRM
120
4 MAK Peak Repetitive Peak reverse voltage
VRRM
h 00 O Working Peak Reverse Voltage
VRRM
100
tt 8- Se DC Blocking
VR
p: 37 mi RMS Reverse Voltage
VR(RMS)
71
// 8- co Forward Continuous Current
IFM
www 873 ndu Average Rectified Output Current
IO
. ct Peak forward surge current @=1.0ms
ma or @=1.0s
IFSM
IFSM
ko C Repetitive Peak Forward Current
IFRM
se o. Power Dissipation
Pd
mi. , L Ambient Resistance Junction to Ambient
RθJA
hk/ imited Storage temperature
TSTG
200
150
106
400
200
2.5
0.5
625
500
250
-65-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
Reverse current
VF1
VF2
BAV19W
IR
1.0
V
1.25
V
0.1
μA
BAV20W
IR
0.1
μA
BAV21W
IR
0.1
μA
Capacitance between terminals
CT
5
pF
Reverse Recovery Time
trr
50
ns
BW
Unit
250
V
250
V
141
V
mA
mA
A
A
mA
mW
℃/W
℃
Conditions
IF=100mA
IF=200mA
VR=100V
VR=150V
VR=200V
VR=0,f=1MHz
IR=IF=30mA
Irr=0.1*IR,RL=100Ω
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
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