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BAV20 Ver la hoja de datos (PDF) - Nanjing International Group Co

Número de pieza
componentes Descripción
Fabricante
BAV20
DGNJDZ
Nanjing International Group Co DGNJDZ
BAV20 Datasheet PDF : 3 Pages
1 2 3
BAV19, BAV20, BAV21
Silicon Epitaxial Planar Diodes
High Voltage Switching Diodes
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
at t = 1 s
at t = 100 μs
at t = 1 μs
Symbol
VRRM
VR
IF
IFRM
IFSM
Ptot
Tj
Tstg
Glass Case DO-35
Dimensions in mm
Value
Unit
120
200
V
250
100
150
V
200
250
mA
625
mA
1
3
A
9
500
mW
175
OC
- 65 to + 175
OC
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 100 µA
Reverse Current
at VR = 100 V
at VR = 150 V
at VR = 200 V
at VR = 100 V, TA = 150 OC
at VR = 150 V, TA = 150 OC
at VR = 200 V, TA = 150 OC
Forward Voltage
at IF = 100 mA
at IF = 200 mA
Diode Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 30 mA, Irr = 3 mA, RL = 100
Symbol
Min.
Max.
Unit
BAV19
BAV20
V(BR)R
120
200
-
-
V
BAV21
250
-
BAV19
BAV20
BAV21
IR
BAV19
BAV20
BAV21
-
100
nA
-
100
nA
-
100
nA
-
100
µA
-
100
µA
-
100
µA
VF
-
1
V
-
1.25
Cd
-
5
pF
trr
-
50
ns

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