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RFM6N45

6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

Intersil 

Semiconductor

September 1998

RFM6N45, RFP6N45,

RFP6N50

6A, 450V and 500V, 1.250 Ohm,

N-Channel Power MOSFETs

[ /Title

(RFM6

N45,

RFP6N4

5,

RFP6N5

0)

/Subject

(6A,

450V

and

500V,

1.250

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

204AA,

TO-

220AB)

/Creator

()

/DOCIN

Features

• 6A, 450V and 500V

• rDS(ON) = 1.250Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedence

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFM6N45

TO-204AA

RFM6N45

RFP6N45

TO-204AA

RFP6N45

RFP6N50

TO-220AB

RFP6N50

NOTE: When ordering, include the entire part number.

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors specifically designed for appli-

cations such as switching regulators, switching converters,

motor drivers, relay drivers, and drivers for high power bipo-

lar switching transistors requiring high speed and low gate

drive power. These types can be operated directly from inte-

grated circuits.

Formerly developmental type TA17425.

Symbol

D

G

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1998

5--1

File Number 1494.2

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