NTE2580 Ver la hoja de datos (PDF) - NTE Electronics

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Fabricante

NTE2580

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Base Emitter Saturation Voltage

VBE(sat) IC = 4A, IB = 800mA

– – 1.5 V

Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0

500 – – V

Collector Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞

400 – – V

Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0

7––V

Collector Emitter Sustaining Voltage VCEX(sus) IC = 3A, IB1 = –0.3A, L = 1mH, 400 –

–

V

IB2 = –1.2A, Clamped

Turn–On Time

Storage Time

Fall Time

ton VCC = 200V, IC = 5A,

tstg

IB1 = 1A, IB2 = – 2A,

RL = 40Ω

tf

– 0.5 – µs

– 2.5 – µs

– 0.3 – µs

.402 (10.2)

.035

(0.9)

BC E

.346

(8.8)

.433

(11.0)

.100 (2.54)

.177 (4.5)

.051 (1.3)

.019 (0.5)

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