1SS401 Ver la hoja de datos (PDF) - Diode Semiconductor Korea
Número de pieza
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Fabricante
1SS401 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
Schottky Barrier Diode
1SS401
FEATURES
z Small total capacitance.
z Low reverse current.
z Low forward voltage:VF=0.38V(typ).
Pb
Lead-free
APPLICATIONS
z For general purpose applications.
ORDERING INFORMATION
Type No.
Marking
1SS401
D9
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
25
V
Diode reverse voltage
VR
20
V
Forward continuous Current
IF
700
mA
Average rectified output current
IO
300
mA
Power Dissipation
Pd
100
mW
Junction temperature
Tj
125
℃
Storage temperature range
Tstg
-55-+125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse current
Symbol
V(BR)R
IR
Forward voltage
VF
Diode capacitance
CD
Test conditions
IR=100μA
VR=20V
IF=1mA
IF=10mA
IF=300mA
VR=0V, f=1MHz
MIN Typ.
20
0.16
0.22
0.38
46
MAX
50
UNIT
V
μA
V
0.45
pF
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