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NTE78 Datasheet PDF : 2 Pages
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NTE78
Silicon NPN Transistor
RF Power Output
Description:
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power
amplifiers in HF band mobile radio applications.
Features:
D High Power Gain
D Emitter Ballasted Construction for High Reliability and Good Performance
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage (RBE = 10Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
V(BR)EBO
V(BR)CBO
V(BR)CER
IE = 1mA, IC = 0
IC = 1mA, IE = 0
IC = 10mA, RBE = 10Ω
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
ICBO
IEBO
hFE
VCB = 30V, IE = 0
VEB = 3V, IC = 0
VCE = 10V, IC = 100mA, Note 1
Output Power
PO VCC = 12V, Pin = 250mW, f =
27MHz
Collector Efficiency
ηC
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
Min Typ Max Unit
5
–
–
V
75 –
–
V
75 –
–
V
–
– 100 µA
–
– 100 µA
35 70 180
6.0 7.5 – W
55 60 – %
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