M2S56D40ATP-75L Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M2S56D40ATP-75L Datasheet PDF : 37 Pages
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DDR SDRAM (Rev.1.0)
Jul. '01 Preliminary
COMMAND TRUTH TABLE
MITSUBISHI LSIs
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
COMMAND
Deselect
MNEMONIC CKE CKE /CS /RAS /CAS /WE BA0,1 A10 A0-9, note
n-1 n
/AP 11-12
DESEL
H
X
H
X
X
X
X
X
X
No Operation
NOP
H
X
L
H
H
H
X
X
X
Row Address Entry &
Bank Activate
ACT
H
H
L
L
H
H
V
V
V
Single Bank Precharge
PRE
H
H
L
L
H
L
V
L
X
Precharge All Banks
PREA
H
H
L
L
H
L
X
H
X
Column Address Entry
& Write
WRITE
H
H
L
H
L
L
V
L
V
Column Address Entry
WRITEA
H
H
L
H
L
L
V
H
V
& Write with
Auto -P r e c h a r g e
Column Address Entry
& Read
Column Address Entry
& Read with
Auto -P r e c h a r g e
READ
READA
H
H
L
H
L
H
V
L
V
H
H
L
H
L
H
V
H
V
Auto -Refresh
REFA
H
H
L
L
L
H
X
X
X
Self-Refresh Entry
REFS
H
L
L
L
L
H
X
X
X
Self-Refresh Exit
Burst Terminate
REFSX
TERM
L
H
H
X
X
X
X
X
X
L
H
L
H
H
H
X
X
X
H
H
L
H
H
L
X
X
X
1
Mode Register Set
MRS
H
H
L
L
L
L
L
L
V
2
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
NOTE:
1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should not be used) for
read bursts with autoprecharge enabled, and for write bursts.
2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register;BA0=1 ,
BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the
op-code to be written to the selected Mode Register.
MITSUBISHI ELECTRIC
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