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Número de pieza

componentes Descripción

Fabricante

NTE488

Silicon NPN Transistor RF Power Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

Emitter Cutoff Current

ICBO

IEBO

VCB = 25V, IE = 0

VEB = 3V, IO = 0

– – 500 µA

– – 500 µA

DC Forward Current Gain

Output Power

Collector Efficiency

hFE VCE = 10V, IC = 0.1A, Note 1 10 50 180 –

PO VCC = 13.5V Pin = 0.3W,

η

f = 175MHz

3.5 4.0 – W

50 60 – %

Note 1. Pulse Test: PW = 150µs duty = 5%.

.260 (6.6)

Max

.500 (12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

Emitter/Case

.018 (0.45) Dia

Base

Collector

45°

.031 (.793)

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