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Número de pieza
componentes Descripción
MGF0909 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
MGF0909
L, S BAND POWER GaAs FET
MITSUBISHI ELECTRIC
MGF0909 Datasheet PDF : 3 Pages
1
2
3
TYPICAL CHARACTERISTICS
6
V
DS
=3V
T
a
=25˚C
I
D
vs. V
GS
4
2
0
-3
-2
-1
0
GATE TO SOURCE VOLTAGE V
GS
(V)
P
O
& add vs. P
in
(f=2.3GHz)
40
V
DS
=10V
I
D
=1.3A
G
P
=11 10 9 dB
P
O
30
50
40
η
add
30
20
20
10
0
0
20
30
INPUT POWER P
in
(dBm)
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
I
D
vs. V
DS
6
V
GS
=-0.5V/Step
T
a
=25˚C
4
V
GS
=0V
2
0
0
1
2
3
4
5
6
DRAIN TO SOURCE VOLTAGE V
DS
(V)
G
LP
,P
1dB
, I
D
and add vs. V
DS
(f=2.3GHz)
13 I
D
=1.3A
12
11
10
39
37
G
LP
P
1dB
35
40
20
6
η
add
8
10
V
DS
(V)
Nov. ´97
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