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TEF6621T Datasheet PDF : 25 Pages
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NXP Semiconductors
11. Static characteristics
Table 59. Static characteristics
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
VCC
supply voltage
on pins VCC1 and VCC2
ICC
supply current
into pins VCC1, VCC2 and
VREGSUP
Min
8
TEF6621 DRAFT
Typ
8.5
DTRuADFnRTeADFrTRM9oADnaFRxTDAmDRFTRAaAFDinTFRT-ADbDFRoTUVRDAaARFDnTFrARidtTFADTDFRITCRDAARDFTFDARTRFADTAFDRTFRDATADRF
FM
90
120
140
mA
AM
100
134
150
mA
VVREGSUP voltage on pin
VREGSUP
Tamb = −20 °C to +85 °C
Power-on reset
IED VP(POR)
power-on reset supply reset at power-on
voltage
Vhys(POR)
power-on reset
hysteresis voltage
IF tstart
start time
series resistance of crystal
Rs = 150 Ω
Logic pins SDA and SCL (voltage referenced to pin GNDD)
S VIH
HIGH-level input
S voltage
VIL
LOW-level input
A voltage
6.35
-
-
V
6.5
6.75
7.0
V
-
0.2
-
V
-
10
100
ms
[1] 1.58
-
[1] −0.5
-
5.5
V
+1.04
V
[1] SDA and SCL HIGH and LOW internal thresholds are specified according to an I2C-bus voltage of 2.5 V ± 10 % or 3.3 V ± 5 %. The
L I2C-bus interface tolerates also SDA and SCL signals from a 5 V I2C-bus, but does not fulfill the 5 V I2C-bus specification completely.
The TEF6621 complies with the fast-mode I2C-bus protocol. The maximum I2C-bus communication speed is 400 kbit/s.
12. Dynamic chUaracNteriCstics Table 60. Dynamic characteristics
VCC = 8.5 V; Tamb = 25 °C; unless otherwise specified.
FM condition: all RF voltages refer to an unterminated RMS voltage with a source impedance 75 Ω; fmod = 1 kHz,
∆f = 22.5 kHz, de-emphasis = 50 µs, fRF = 97.1 MHz; unless otherwise specified.
AM condition: all RF voltages are RMS values measured at the input of a 15 pF/60 pF dummy aerial; fmod = 400 Hz,
m = 30 %, fRF = 990 kHz; unless otherwise specified.
All values measured in a test circuit according to Figure 29; default settings; audio signals measured at LOUT and ROUT with
IEC tuner filter (200 Hz to 15 kHz; IEC 60315-4); unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
Crystal oscillator; pins XTAL1 and XTAL2
fxtal
∆fxtal/fxtal
crystal frequency
relative crystal frequency
variation
fundamental frequency
device inaccuracy
-
4
−45 -
-
MHz
+45 10−6
Ci
input capacitance
input capacitance from pin XTAL1 and
1
3
4
pF
pin XTAL2 to ground
Ri
input resistance
-
-
−750 Ω
TEF6621_1
Objective data sheet
Rev. 01.04 — 7 August 2008
© NXP B.V. 2008. All rights reserved.
40 of 58
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