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GMG112N60FF Ver la hoja de datos (PDF) - Green Power Semiconductors

Número de pieza
componentes Descripción
Fabricante
GMG112N60FF
Green-Power
Green Power Semiconductors Green-Power
GMG112N60FF Datasheet PDF : 2 Pages
1 2
Green Power
Semiconductors
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 8800
Fax: +39-010-667 8812
Web: www.gpsemi.it
E-mail: info@gpsemi.it
BLOCKING CHARACTERISTICS
Characteristic
VRRM
VRSM
Repetitive peak reverse voltage
Repetitive peak off-state voltage
IRRM
Repetitive peak reverse current, max.
VINS
RMS insulation voltage
GMG1xxN60
SINGLE-PHASE RECTIFIER BRIDGE
Low thermal resistance
Electrically insulated package
Versatile pin out
Hight output current
VOLTAGE UP TO
1200-1600V V
AVERAGE OUTPUT CURRENT
60 A
Conditions
VR, single phase, half wave, Tj = Tjmax
Any terminal to base - 60 s
Value
1200-1600V
1700 V
2 mA
3000 V
FORWARD CHARACTERISTICS
Io(AV)
Average DC output current
IFSM
Surge current
I²t
I² t for fusing coordination
VF(TO)
rF
Threshold voltage
Forward slope resistance
VFM
Forward voltage, max
Tc = 80 °C - Solder connection
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
Tj = Tjmax
Tj = Tjmax
Forward current IF = 50 A, Tj = 25 °C
60 A
540 A
1.458 kA²s
1V
3.91 m
1.2 V
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Rth(c-h)
Thermal resistance (junction to case)
Thermal resistance (case to heatsink)
Per junction / per bridge
Tjmax
Operating junction temperature
F
Mounting torque +/- 10%
Mass
1.3/0.32 °C/W
0.15 °C/W
-40 / 150 °C
4.5 N·m
90 g
Voltage rating
Type
number
GMG1
Voltage code
12
14
16
VRRM max
1200V
1400V
1600V
VRSM
1300V
1500V
1700V
Document GMG1xxN60T002
dimensions in mm

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