BSR40 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BSR40 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN medium power transistors
Product specification
BSR40; BSR41; BSR42; BSR43
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
93
K/W
13
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BSR40; BSR42
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 µA; VCE = 5 V; note 1
BSR41; BSR43
DC current gain
BSR40; BSR42
IC = 100 mA; VCE = 5 V; note 1
BSR41; BSR43
DC current gain
BSR40; BSR42
IC = 500 mA; VCE = 5 V; note 1
BSR41; BSR43
VCEsat
VBEsat
Cc
Ce
fT
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 50 mA; VCE = 10 V; f = 100 MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = 100 mA; IBon = 5 mA;
IBoff = −5 mA
MIN.
−
−
−
10
30
40
100
30
50
−
−
−
−
−
−
100
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01.
MAX.
100
50
100
UNIT
nA
µA
nA
−
−
120
300
−
−
250
mV
500
mV
1
V
1.2
V
12
pF
90
pF
−
MHz
250
ns
1
µs
1999 Apr 28
3
Share Link: 