TG2216TU Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TG2216TU

RF SPDT Switch

Toshiba 

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

TG2216TU

RF SPDT Switch

Antenna switches for Bluetooth Class1, wireless LAN and PHS

Filter switching for mobile communication

Features

TG2216TU

· Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz

= 0.7dB (typ.) @2.5 GHz

· High isolation: ISL = 25dB (typ.) @1.0 GHz

= 23dB (typ.) @2.5 GHz

· High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz

· Low voltage operation: VCON = 0 V/2.7 V

· Small package: UF6 package (2.0 × 2.1 × 0.7 mm)

Pin Connection and Marking (top view)

VC1 RFcom VC2

6

5

4

Weight: 0.007g (typ.)

Equivalent Circuit

VC1 RFcom VC2

6

5

4

US

1

2

3

RF1 GND RF2

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Control voltage

Input power

Total power dissipation

Operating temperature range

Storage temperature range

VC1

VC2

Pi

PD (Note)

Topr

Tstg

6

6

1

100

−40 to 85

−55 to 125

Note: When mounted on the glass epoxy of 2.5 cm2 × 1.6 t

1

2

3

RF1 GND RF2

Unit

V

W

mW

°C

°C

1

2003-03-20

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