EGP30A Ver la hoja de datos (PDF) - SUNMATE electronic Co., LTD
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EGP30A Datasheet PDF : 2 Pages
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EGP30A - EGP30M
GLASS PASSIVATED FAST EFFICIENT RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
¾
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
EGP EGP EGP EGP EGP EGP EGP
30A 30B 30D 30F 30G 30J 30K
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 300 400 600 800
EGP
30M
1000
RMS Reverse Voltage
VR(RMS)
35
70 140 210 280 420 560 700
Average Rectified Output Current
(Note 1)
@TA = 55°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
3.0
125
115
Forward Voltage
@IF = 3.0A
VFM
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 125°C
IRM
Reverse Recovery Time (Note 2)
trr
1.0
50
1.3
1.7
5.0
120
75
Typical Junction Capacitance (Note 3)
Typical thermal resistance (NOTE 3)
Storage Temperature Range
Cj
R JA
R JL
TSTG
75
20
8
-65 to +150
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
Unit
V
V
A
A
V
µA
nS
pF
oC / W
°C
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