BDV64A Ver la hoja de datos (PDF) - SavantIC Semiconductor

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Fabricante

BDV64A

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BDV64/64A/64B/64C

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDV64

V(BR)CEO

Collector-emitter

breakdown voltage

BDV64A

BDV64B

IC=-30mA, IB=0

BDV64C

VCEsat

VBE

ICBO

ICEO

IEBO

hFE

VEC

Collector-emitter saturation voltage IC=-5A ,IB=-20mA

Base-emitter on voltage

BDV64

Collector

cut-off current

BDV64A

BDV64B

BDV64C

BDV64

IC=-5A ; VCE=-4V

VCB=-60V, IE=0

VCB=-30V, IE=0;TC=150

VCB=-80V, IE=0

VCB=-40V, IE=0;TC=150

VCB=-100V, IE=0

VCB=-50V, IE=0;TC=150

VCB=-120V, IE=0

VCB=-60V, IE=0;TC=150

VCE=-30V, IB=0

Collector

cut-off current

BDV64A

BDV64B

VCE=-40V, IB=0

VCE=-50V, IB=0

BDV64C VCE=-60V, IB=0

Emitter cut-off current

VEB=-5V; IC=0

DC current gain

IC=-5A ; VCE=-4V

Diode forward voltage

IE=-10A

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

MIN

-60

-80

-100

-120

TYP.

MAX UNIT

V

-2.0

V

-2.5

V

-0.4

-2.0

-0.4

-2.0

mA

-0.4

-2.0

-0.4

-2.0

-2

mA

1000

-5

mA

-3.5

V

MAX

1.0

UNIT

/W

2

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