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MP02/130-25 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
MP02/130-25
Dynex
Dynex Semiconductor Dynex
MP02/130-25 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MP02 XX 130 Series
SURGE RATINGS - PER ARM
Symbol
I
FSM
I2t
Parameter
Conditions
Surge (non-repetitive) on-state current
10ms half sine;
Tj = 150oC
I2t for fusing
10ms half sine;
Tj = 150oC
VR = 0
VR = 50% VRRM
VR = 0
VR = 50% VRRM
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-hs)
Tvj
Tsto
Visol
Parameter
Thermal resistance - junction to case
per Diode
Thermal resistance - case to heatsink
per Diode
Virtual junction temperature
Storage temperature range
Isolation voltage
Conditions
dc
halfwave
3 phase
Mounting torque = 6Nm
with mounting compound
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
2200
Units
A
1760
A
24200 A2s
15490 A2s
Max.
0.37
0.38
0.39
Units
oC/W
oC/W
oC/W
0.07 oC/W
150
oC
-40 to 150 oC
2.5
kV
CHARACTERISTICS
Symbol
VFM
IRM
VTO
rT
Parameter
Forward voltage
Peak reverse current
Threshold voltage
On-state slope resistance
Conditions
At 300A , Tcase = 25oC
At VRRM, Tj = 150oC
At Tvj = 150oC
At Tvj = 150oC
Max.
1.53
30
1.10
1.30
Units
V
mA
V
m
2/9

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