EA20QS06 Ver la hoja de datos (PDF) - Nihon Inter Electronics

Número de pieza

componentes Descripción

Fabricante

EA20QS06

Schottky Barrier Diode

Nihon Inter Electronics 

SBD Type : EA20QS06

FEATURES

* TO-251AA Case

* Low Forward Voltage drop

* Low Power Loss

* High Surge Capability

* 40 Volts thru 100 Volts Types Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.35g

Rating

Symbol

EA20QS06

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

Average Rectified

Output Current

P.C.Board

mounted *

-

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

VRRM

VRSM

IO

IF(RMS)

IFSM

Tjw

Tstg

60

65

1.4 Ta=33°C

1.7 Tc=135°C

50Hz Half Sine Wave

Resistive Load

2.67

40

50Hz Half Sine Wave,1cycle,

Non-repetitive

- 40 to + 150

- 40 to + 150

Unit

V

V

A

A

A

°C

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal

Junction to Ambient

Resistance

Junction to Case

* Print Land = 20x20 mm

Symbol

Conditions

IRM Tj=25°C,VRM=VRRM

VFM Tj=25°C,IFM= 1.7 A

Rth(j-a) P.C.Board mounted *

Rth(j-c)

-

Min Typ Max

- - 2.0

- - 0.58

- - 80

-- 7

Unit

mA

V

°C/W

°C/W

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