VN2406D Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VN2406D Datasheet PDF : 5 Pages
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TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0
VGS = 10 V
0.8
4.0 V
0.6
3.5 V
Output Characteristics for Low Gate Drive
200
VGS = 3 V
2.6 V
160
2.4 V
120
0.4
3.0 V
0.2
0
0
2.5 V
2.0 V
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
0.5
VDS = 15 V
0.4
TJ = –55_C
125_C
25_C
0.3
0.2
0.1
2.2 V
80
2.0 V
40
1.8 V
0
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
12
10
8
6
0.5 A
4
I D = 0.1 A
2
1.0 A
0
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
6
VGS = 10 V
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ID – Drain Current (A)
Document Number: 70204
S-04279—Rev. F, 16-Jul-01
0
0
4
8
12
16
20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.25
VGS = 10 V
2.00
ID = 0.5 A
1.75
0.1 A
1.50
1.25
1.00
0.75
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
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