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UT100N03

100A, 30V N-CHANNEL POWER MOSFET

Unisonic Technologies 

UT100N03

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC =25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 2)

VGSS

ID

IDM

±20

V

100

A

400

A

Single Pulsed Avalanche Current (Note 3)

IAS

Single Pulsed Avalanche Energy (Note 3)

EAS

Power Dissipation

Derate above 25℃

TO-220/TO-263

TO-251

TO-220/TO-263

PD

TO-251

35

A

875

mJ

100

W

50

0.67

W/℃

0.4

Junction Temperature

TJ

+175

℃

Strong Temperature

TSTG

-55 ~ +175

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature

3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃.

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220/TO-263

TO-251

TO-220/TO-263

TO-251

SYMBOL

θJA

θJC

RATINGS

62.5

110

1.5

2.5

„ ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise noted)

UNIT

℃/W

℃/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250 µA

Drain-Source Leakage Current

IDSS

VDS=30 V,VGS =0 V

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20 V

ON CHARACTERISTICS(Note2)

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

Static Drain-Source On-Resistance

RDS(ON)

VGS =10 V, ID =50 A

VGS =4.5 V, ID =40 A

DYNAMIC PARAMETERS(Note3)

Input Capacitance

Output Capacitance

CISS

COSS

VDS =15V, VGS =0V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS(Note3)

Total Gate Charge

Gate Source Charge

QG

QGS

VDS =15V, VGS =5V, ID =16A

Gate Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=15V, ID =1A, RGEN =6Ω

VGS =10 V

Turn-OFF Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=20 A,VGS=0 V

Drain-Source Diode Forward Current

IS

Note: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.

2. Guaranteed by design, not subject to production testing.

MIN TYP MAX UNIT

30

V

1 µA

±100 nA

1

3V

3.05 5.3 mΩ

4.2 8

9500

800

pF

300

50 65

20.8

nC

19

25.7 50

10 20 ns

128 200

34 70

1.5 V

90 A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R502-193.D

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