RXH100N03 Ver la hoja de datos (PDF) - ROHM Semiconductor
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RXH100N03 Datasheet PDF : 7 Pages
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Data Sheet
4V Drive Nch MOSFET
RXH100N03
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Dimensions (Unit : mm)
SOP8
(8)
(5)
(1)
(4)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RXH100N03
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
V
VGSS
20
V
ID
10
A
IDP *1
36
A
IS
1.6
A
ISP *1
36
A
PD *2
2.0
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Inner circuit
(8)
(7)
(6)
(5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
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1/6
2011.04 - Rev.A
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