XP132A11A1SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
XP132A11A1SR Datasheet PDF : 4 Pages
| |||
XP132A11A1SR
Power MOS FET
■ Electrical Characteristics
10000
Drain / Source Voltage vs. Capacitance
Vgs=0V, f=1MHz, Ta=25℃
1000
100
Ciss
Coss
Crss
1000
Switching Time vs. Drain Current
Vgs=-5V, Vdd≒-10V, PW=10μs, duty≦1%, Ta=25℃
tf
100
td(off)
10
tr
td(on)
10
0
-5
-10 -15 -20 -25 -30
Drain/Source Voltage:Vds (V)
1
0
-2
-4
-6
-8
-10
Drain Current:Id (A)
Gate / Source Voltage vs. Gate Charge
Vds=-10V, Id=-5A, Ta=25℃
-10
Reverse Drain Current vs. Source / Drain Voltage
Pulse Test, Ta = 25℃
-20
-8
u
-6
-4
-2
-16
-12
-4.5V
-8
-4
Vgs=0V, 4.5V
0
0
5
10
15
20
25
Gate Charge:Qg (nc)
0
0
-0.2
-0.4
-0.6
-0.8
-1
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a) = 50℃/W ( Implemented on a glass epoxy PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
Pulse Width:PW (sec)
10
100
388
Share Link: 