XP132A11A1SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
XP132A11A1SR Datasheet PDF : 4 Pages
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■ Electrical Characteristics
Drain Current vs. Drain / Source Voltage
Pulse Test, Ta = 25℃
-20
-10V
-5V
-16
-4.5V
-4V
-12
-8
-4
0
0
-3.5V
-3V
Vgs=-2.5V
-1
-2
-3
-4
-5
Drain/Source Voltage:Vds (V)
Drain Current vs. Gate / Source Voltage
Vds= -10V, Pulse Test
-20
25℃
-16
Ta=-55℃
-12
125℃
-8
-4
0
0
-1
-2
-3
-4
-5
Gate/Source Voltage:Vgs (V)
Drain / Source On-State Resistance
vs. Gate / Source Voltage
Pulse Test, Ta = 25℃
0.3
Drain / Source On-State Resistance
vs. Drain Current
Pulse Test, Ta = 25℃
1
0.25
0.2
Id=-5A
0.15
-3A
0.1
Vgs=-4.5V
0.1
-10V
u
0.05
0
0
-2
-4
-6
-8
-10
Gate/Source Voltage:Vgs (V)
0.01
0
-5
-10
-15
-20
Drain Current:Id (A)
Drain / Source On-State Resistance
vs. Ambient Temperature
Pulse Test
0.3
0.25
0.2
0.15
Vgs=-4.5V
Id=-5A
-3A
0.1
0.05
0
-50
-10V
-3A, -5A
0
50
100
150
Ambient Temp. :Topr (℃)
Gate / Source Cut Off Voltage Variance
vs. Ambient Temperature
Vds = -10V, Id = -1mA
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-50
0
50
100
150
Ambient Temp. :Topr (℃)
387
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