XP132A11A1SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
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XP132A11A1SR Datasheet PDF : 4 Pages
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XP132A11A1SR
Power MOS FET
■ Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
( note ) : Effective during pulse test.
CONDITIONS
Vds = - 30 , Vgs = 0V
Vgs = ±20 , Vds = 0V
Id = -1mA , Vds = - 10V
Id = - 3A , Vgs = - 10V
Id = - 3A , Vgs = - 4.5V
Id = - 3A , Vds = - 10V
If = - 5A , Vgs = 0V
Ta=25℃
MIN TYP MAX UNITS
- 10
µA
±1
µA
- 1.0
- 2.5
V
0.055 0.065
Ω
0.095 0.11
Ω
6
S
- 0.85 - 1.1
V
Dynamic characteristics
PARAMETER
SYMBOL
Input Capacitance
Ciss
u
Output Capacitance
Coss
Feedback Capacitance
Crss
CONDITIONS
Vds = - 10V , Vgs = 0V
f = 1 MHz
Ta=25℃
MIN TYP MAX UNITS
680
pF
450
pF
170
pF
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
Vgs = - 5V , Id = - 3A
Vdd = - 10V
Ta=25℃
MIN TYP MAX UNITS
15
ns
20
ns
30
ns
20
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN TYP MAX UNITS
50
℃/W
386
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