XP132A11A1SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
XP132A11A1SR Datasheet PDF : 4 Pages
| |||
XP132A11A1SR
Power MOS FET
◆ P-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance : 0.11Ω (max)
◆ Ultra High-Speed Switching
◆ SOP - 8 Package
■ Applications
● Notebook PCs
● Cellular and portable phones
● On - board power supplies
● Li - ion battery systems
■ General Description
The XP132A11A1SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■ Features
Low on-state resistance : Rds (on) = 0.065Ω ( Vgs = -10V )
Rds (on) = 0.11Ω ( Vgs = -4.5V )
Ultra high-speed switching
Operational Voltage : -4.5V
High density mounting : SOP - 8
■ Pin Configuration
S1
S2
S3
G4
SOP - 8 Top View
8D
7D
6
D
5D
■ Equivalent Circuit
1
8
2
7
3
6
4
5
P - Channel MOS FET
( 1 device built-in )
■ Pin Assignment
PIN NUMBER PIN NAME
FUNCTION
u
1-3
S
4
G
Source
Gate
5-8
D
Drain
■ Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
I dp
Idr
Pd
Tch
Tstg
RATINGS
- 30
+ 20
-5
- 20
-5
2.5
150
- 55 to 150
( note ) : When implemented on a glass epoxy PCB
Ta=25OC
UNITS
V
V
A
A
A
W
OC
OC
385
Share Link: 