T35L6432B Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T35L6432B Datasheet PDF : 16 Pages
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T35L6432B
AC ELECTRICAL CHARACTERISTICS (Note 5) (0°C≤TA≤70°C;VCC=3.3V +0.3V/-0.165V)
DESCRIPTION
Clock
Clock cycle time
Clock to output valid
Clock to output invalid
Clock to output in Low-Z
Output Times
Clock HIGH time
Clock LOW time
Clock to output in High-Z
OE to output valid
OE to output in Low-Z
OE to output in High-Z
Setup Times
Address
Address Status( ADSC , ADSP )
Address Advance ( ADV )
Byte Write Enables
( BW1~ BW4 , BWE , GW )
Data-in
Chip Enables( CE , CE2 ,CE2)
Hold Times
Address
Address Status( ADSC , ADSP )
Address Advance ( ADV )
Byte Write Enables
( BW1~ BW4 , BWE , GW )
Data-in
Chip Enables( CE , CE2 ,CE2)
-9
-10
-11
-12 UNITS NOTES
SYM. MIN MAX MIN MAX MIN MAX MIN MAX
tKC 10.5
15
15
15
ns
tKQ
9.0
10
11
12 ns
tKQX 3
3
3
3
ns
tKQLZ 3
3
3
3
ns
tKH 1.8
1.9
2.0
2.0
ns
tKL
1.8
1.9
2.0
2.0
ns 6, 7
tKQHZ
5
5
5
5 ns 6, 7
tOEQ
5
5
5
5 ns 9
tOELZ 0
0
0
0
ns 6, 7
tOEHZ
5
5
5
5 ns 6, 7
tAS
1.7
2.0
2.0
2.0
tADSS 1.7
2.0
2.0
2.0
tAAS 1.7
2.0
2.0
2.0
tWS
1.7
2.0
2.0
2.0
tDS
1.7
2.0
2.0
2.0
tCES 1.7
2.0
2.0
2.0
ns 8, 10
ns 8, 10
ns 8, 10
8, 10
ns
ns 8, 10
ns 8, 10
tAH 0.5
0.5
0.5
0.5
tADSH 0.5
0.5
0.5
0.5
tAAH 0.5
0.5
0.5
0.5
tWH 0.5
0.5
0.5
0.5
tDH 0.5
0.5
0.5
0.5
tCEH 0.5
0.5
0.5
0.5
ns 8, 10
ns 8, 10
ns 8, 10
8, 10
ns
ns 8, 10
ns 8, 10
Taiwan Memory Technology, Inc. reserves the right P.9
to change products or specifications without notice.
Publication Date: JUL. 2002
Revision: A
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