PNA3202 Ver la hoja de datos (PDF) - Panasonic Corporation

Número de pieza

componentes Descripción

Fabricante

PNA3202

Silicon PIN Photodiodes

Panasonic Corporation 

PIN Photodiodes

PNA3202

Silicon PIN Photodiodes

For optical information systems

Features

Fast response : tr, tf = 30 ns (typ.)

Good photo current linearity

Low dark current : ID = 10 nA (max.)

Wide spectral sensitivity

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Reverse voltage (DC)

Power dissipation

Operating ambient temperature

Storage temperature

Symbol Ratings Unit

VR

30

V

PD

30

mW

Topr

–25 to +85

˚C

Tstg –30 to +100 ˚C

5.3 max.

5.0±0.1

Unit : mm

1.8±0.3

1.0±0.2

0.6

1 2 1.0

2-0.5±0.1

2.54±0.1

10˚ 10˚

5˚

5˚

0.2+–00..015

1: Common cathode

2: Anode

Dimensions of detection area

2.3

Unit : mm

2.0

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min typ max Unit

Dark current

Photo current

Peak sensitivity wavelength

Response time

Capacitance between pins

Acceptance half angle

ID

IL

λP

tr, tf*2

Ct

θ

VR = 10V

VR = 10V, L = 1000 lx*1

VR = 10V

VR = 10V, RL = 50Ω

VR = 10V, f = 1MHz

Measured from the optical axis to the half power point

1

10 nA

40

µA

900

nm

30

ns

10

pF

65

deg.

Photo sensitivity

S

VR = 10V, λ = 800nm

0.50 0.55 0.60 A/W

*1 White tungsten lamp light source (color temperature T = 2856K)

*2 Semiconductor laser light source ( λ = 800nm )

1

Share Link: