FTZU6.2E Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

FTZU6.2E

ESD Protection diode

ROHM Semiconductor 

Diodes

ESD Protection diode

FTZU6.2E

zApplications

ESD Protection

(Anode common twin type)

zFeatures

1) Small mold type. (SMD5)

2) High reliability

zConstruction

Silicon epitaxial planar

zExternal dimensions (Unit : mm)

r

 㧗 ฦ

ޓ㧙

࡝

࡯E࠼acߣh

߽leaหd

ኸhaᴺs same

dimension





r

ޓޓޓ







r





㨪

r

r



㪩㪦㪟㪤㩷㪑㩷㪪㪤㪛㪌

㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪋㪘

㫎㪼㪼㫂㩷㪺㫆㪻㪼

zTaping dimensions (Unit : mm)

㪋㪅㪇㫧㪇㪅㪈

㪉㪅㪇㫧㪇㪅㪇㪌

㱢㪈㪅㪌㫧㪇㪅㪈

䇭䇭䇭䇭䇭㩷㩷㪇

FTZU6.2E

zLand size figure

㪇㪅㪏㪤 㪠㪥 㪅

㪇㪅㪋㪌 㪇㪅㪊㪌 㪇㪅㪊㪌 㪇㪅㪋㪌

㪇㪅㪍

㪇㪅㪐㪌 㪇㪅㪐㪌

㪈㪅㪐

㪪㪤㪛㪌

zStructure 㩷

㪇㪅㪊㫧㪇㪅㪈

㪊㪅㪉㫧㪇㪅㪈

㪋㪅㪇㫧㪇㪅㪈

㱢㪈㪅㪇㪤㪠㪥

㪈㪅㪊㪌㫧㪇㪅㪈

zAbsolute maximum ratings (Ta=25qC)

Parameter

Symbol

Limits

Unit

Power dissipation (*1ͅ

P(㶎)

200

mW

Junction temperature

Tj

150

㷄

Storage temperature

Tstg

-55 to +150

㷄

㩿㶎㪀㪫㫆㫋㪸㫃㩷㫆㪽㩷㪋㩷㪼㫃㪼㫄㪼㫅㫋㫊

zElectrical characteristic (Ta=25qC)! ( Rating of per diode)

Parameter

Symbol Min. Typ.

Zener voltage

Reverse current

VZ

5.90

-

㪠㪩

-

-

Dynamic impedance

ZZ

-

-

Zener voltage

Zzk

-

-

Capacitance between terminals

Ct

-

8

Zener voltage is measured with 40msec current supply

Max.

6.50

3.00

60

100

-

Unit

Conditions

V

IZ=5mA

μA

VR=5.5V

㱅

Iz=5mA

㱅

IZ=0.5mA

pF f=1MHz䇭VR=0V

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