10N60C5M Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

10N60C5M

CoolMOS Power MOSFET

IXYS CORPORATION 

Advanced Technical Information

Source-Drain Diode

Symbol Conditions

Characteristic Values

(TVJ = 25°C, unless otherwise specified)

min. typ. max.

IS

VGS = 0 V

VSD

IF = 5.2 A; VGS = 0 V

trr

QRM

IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V

IRM

5.2

A

0.9 1.2

V

260

ns

21

µC

24

A

Component

Symbol Conditions

TVJ

operating

Tstg

Md

mounting torque

Symbol Conditions

RthCH

RthJA

Weight

with heatsink compound

thermal resistance junction - ambient

Maximum Ratings

-40...+150 °C

-40...+150 °C

0.4 ... 0.6 Nm

Characteristic Values

min. typ. max.

0.50

K/W

80

K/W

2

g

IXKP 10N60C5M

IXYS reserves the right to change limits, test conditions and dimensions.

© 2006 IXYS All rights reserved

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