TSM10N60 Ver la hoja de datos (PDF) - TSC Corporation
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TSM10N60 Datasheet PDF : 6 Pages
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Preliminary
TSM10N60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC
RӨJA
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Diode Forward Voltage
Dynamic b
VGS = 0V, ID = 250uA
VGS = 10V, ID = 4.75A
VDS = VGS, ID = 250uA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 40V, ID = 4.75A
IS = 9.5A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSS
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching c
VDS = 480V, ID = 9.5A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
Qgs
Qgd
Ciss
Coss
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
VGS = 10V, ID = 9.5A,
tr
Turn-Off Delay Time
VDD = 300V, RG = 25Ω
td(off)
Turn-Off Fall Time
tf
Reverse Recovery Time
VGS = 0V, IS = 9.5A,
tfr
Reverse Recovery Charge
dIF/dt = 100A/us
Qfr
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=9.5A, L=9.9mH, RG=25Ω
3. Pulse test: pulse width ≤300uS, duty cycle ≤2%
4. Essentially Independent of Operating Temperature
Limit
2.90
62.5
Min Typ
600
--
--
0.65
2.0
--
--
--
--
--
--
11
--
--
--
45
--
6.7
--
18.5
--
1380
--
155
--
20
--
25
--
72
--
145
--
75
--
400
--
4.0
Unit
oC/W
oC/W
Max Unit
--
V
0.75
Ω
4.0
V
1
uA
±100
nA
--
S
1.4
V
57
--
nC
--
1820
210
pF
28
--
--
nS
--
--
--
nS
--
uC
2/6
Version: Preliminary
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