2SC3929G Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SC3929G Datasheet PDF : 5 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3929G
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SA1531G
■ Features
/ • Low noise voltage NV
• High forward current transfer ratio hFE
e • S-Mini type package, allowing downsizing of the equipment and
e. automatic insertion through the tape packing
c stag ■ Absolute Maximum Ratings Ta = 25°C
n d le Parameter
Symbol Rating
Unit
cyc Collector-base voltage (Emitter open) VCBO
55
V
a e life Collector-emitter voltage (Base open) VCEO
55
V
ct Emitter-base voltage (Collector open) VEBO
5
V
n u du Collector current
IC
50
mA
Pro Peak collector current
ICP
100
mA
te tin ur Collector power dissipation
PC
150
mW
fo e n. Junction temperature
Tj
150
°C
ing typ tio Storage temperature
Tstg −55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: T
• Pin Name
1. Base
2. Emitter
3. Collector
ain onludes faoilnlotewnanncceetyupeed typpeed test info.rjpm/ean/ ■ Electrical Characteristics Ta = 25°C ± 3°C
inc m na tin ty la .co Parameter
Symbol
Conditions
Min Typ Max Unit
c d te n d t ic Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
55
V
ed ne in co ue ou on Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
55
V
M is tinu pla ma dis ntin L ab nas Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
iscon laned isco UR .pa Base-emitter voltage
VBE VCE = 1 V, IC = 100 mA
0.7 1.0
V
n Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1
µA
/D p d ing ico Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
1
µA
D nce llow em Forward current transfer ratio *
hFE VCE = 5 V, IC = 2 mA
180
700
na it fo w.s Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.6
V
te is w Transition frequency
fT
VCB = 5 V, IE = −2 mA, f = 200 MHz
100
MHz
ain e v ://w Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
M as ttp 2. *: Rank classification
Ple h Rank
R
S
T
hFE
180 to 360 260 to 520 360 to 700
Marking symbol
TR
TS
TT
Publication date: April 2007
SJC00356AED
1
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