GN13 Ver la hoja de datos (PDF) - SynSemi, Inc.
Número de pieza
componentes Descripción
Fabricante
GN13 Datasheet PDF : 2 Pages
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GN1A - GN13
PRV : 50 - 1300 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13 UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 1300 V
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 910
V
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 1300 V
Maximum Average Forward Current Ta = 75 °C IF(AV)
1.0
A
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
IFSM
30
A
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
VF
1.0
V
Maximum DC Reverse Current Ta = 25 °C
IR
5.0
µA
at rated DC Blocking Voltage
Ta = 100 °C
IR(H)
50
µA
Typical Junction Capacitance (Note1)
CJ
8
pF
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
Page 1 of 2
Rev. 01 : January 10, 2004
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