MMBTH10 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

MMBTH10

NPN RF Transistor

Fairchild Semiconductor 

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

100

Vce = 5V

80

125 °C

60

25 °C

40

20

- 40 °C

0

0.1 0.2 0.5 1 2

5 10 20 50

I C - COLLECTOR CURRENT (mA)

P 42

Base-Emitter Saturation

Voltage vs Collector Current

1

β = 10

0.9

- 40 °C

0.8

25 °C

0.7

0.6

125 °C

0.5

0.4

0.3

0.1

1

10 20

I C - COLLECTOR CURRENT (mA)

P 42

Collector-Cutoff Current

vs Ambient Temperature

10

VCB = 30V

1

0.1

25

50

75

100

125

150

TA - AMBIENT TEMPERATURE ( C° )

NPN RF Transistor

(continued)

Collector-Emitter Saturation

Voltage vs Collector Current

0.2

β = 10

0.15

125 °C

0.1

25 °C

0.05

- 40 °C

0.1

1

10 20

I C - COLLECTOR CURRENT (mA)

Base-Emitter ON Voltage vs

Collector Current

1

VCE = 5V

0.8

- 40 °C

25 °C

125 °C

0.6

0.4

0.2

0.01

0.1

1

10

100

I C - COLLECTOR CURRENT (mA)

P 42

Power Dissipation vs

Ambient Temperature

350

300

250 SOT-23

200

TO-92

150

100

50

0

0

25

50

75

100

125

150

TEMPERATURE (oC)

Share Link: