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GBJ801 Ver la hoja de datos (PDF) - LiteOn Technology

Número de pieza
componentes Descripción
Fabricante
GBJ801
LiteOn
LiteOn Technology LiteOn
GBJ801 Datasheet PDF : 2 Pages
1 2
LITE-ON
SEMICONDUCTOR
GBJ8005 thru GBJ810
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 8.0 Amperes
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
The plastic material has UL flammability classification
94V-0
UL Recognition File # E95060
MECHANICAL DATA
Polarity : Symbols molded on body
Weight : 0.23 ounces, 6.6 grams
Mounting position : Any
GBJ
RA
Q
+ ~~
P
I
H
DB
G
-E
L
C
M
J
N O OF
K
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
GBJ
MIN. MAX.
29.70 30.30
19.70
17.0
4.70
20.30
18.0
4.90
10.80 11.20
2.30 2.70
3.10 3.40
3.40 3.80
4.40 4.80
2.50 2.90
0.60 0.80
2.00 2.40
0.90
9.80
1.10
10.20
7.30 7.70
3.80 4.20
(3.0) x 45
3.10 3.40
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL GBJ8005 GBJ801 GBJ802 GBJ804 GBJ806 GBJ808 GBJ810 UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward (with heatsink Note 2) I(AV)
Rectified Current @TC=110 C (without heatsink)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
IFSM
100
200
400
600
800 1000 V
70
140
280
420
560
700
V
100
200
400
600
800 1000 V
8.0
A
2.9
170
A
Maximum forward Voltage at 4.0A DC
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
IR
I 2 t Rating for fusing (t < 8.3ms)
I2 t
Typical Junction
Capacitance per element (Note 1)
CJ
1.0
V
5.0
500
uA
120
A 2S
55
pF
Typical Thermal Resistance (Note 2)
R0JC
1.6
C/W
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.
-55 to +150
-55 to +150
C
C
REV. 2, 01-Dec-2000, KBDG02

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