2SC3039 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3039 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3039
DESCRIPTION
·
·With TO-220C package
·High breakdown voltage (VCBO≥500V).
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·400V/7A switching regulator applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
固IN电C半H导AN体GE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
UNIT
V
V
V
A
ICM
Collector current-peak
14
A
IB
Base current
3
A
PC
Collector dissipation
Ta=25℃
TC=25℃
1.75
W
50
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
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