TGF4250 Ver la hoja de datos (PDF) - TriQuint Semiconductor
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TGF4250 Datasheet PDF : 9 Pages
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Product Data Sheet
December 16, 2002
TGF4250-SCC
Assembly Process Notes
Reflow process assembly notes:
· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec
· An alloy station or conveyor furnace with reducing atmosphere should be used.
· No fluxes should be utilized.
· Coefficient of thermal expansion matching is critical for long-term reliability.
· Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
· Vacuum pencils and/or vacuum collets are the preferred method of pick up.
· Air bridges must be avoided during placement.
· The force impact is critical during auto placement.
· Organic attachment can be used in low-power applications.
· Curing should be done in a convection oven; proper exhaust is a safety concern.
· Microwave or radiant curing should not be used because of differential heating.
· Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
· Thermosonic ball bonding is the preferred interconnect technique.
· Force, time, and ultrasonics are critical parameters.
· Aluminum wire should not be used.
· Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
· Maximum stage temperature is 200 °C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Die are shipped in gel pack unless otherwise specified.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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