TGF4250 Ver la hoja de datos (PDF) - TriQuint Semiconductor
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TGF4250 Datasheet PDF : 9 Pages
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Product Data Sheet
December 16, 2002
TGF4250-SCC
TABLE I
MAXIMUM RATINGS
SYMBOL
VDS
VGS
PD
TCH
TSTG
TM
PARAMETER 1/
Drain to Source Voltage
Gate to Source Voltage Range
Power Dissipation
Operating Channel Temperature
Storage Temperature
Mounting Temperature (30 seconds)
VALUE
12 V
0 to -5.0 Volts
See Thermal Data
150°C
-65 to 200°C
320°C
NOTES
2/, 3/
1/ These ratings represent the maximum values for this device. Stresses beyond those listed
under “Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “DC Probe Characteristics” and “RF Probe Characteristics” is not
implied. Exposure to maximum rated conditions for extended periods may affect device
reliability.
2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/ These ratings apply to each individual FET
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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