2SD2012 Ver la hoja de datos (PDF) - SavantIC Semiconductor
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componentes Descripción
Fabricante
2SD2012 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A;VCE=5V
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
Product Specification
2SD2012
MIN TYP. MAX UNIT
60
V
1.0
V
1.0
V
100
µA
100
µA
100
320
20
3
MHz
35
pF
2
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