SBL3030PT Ver la hoja de datos (PDF) - Vishay Semiconductors
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SBL3030PT Datasheet PDF : 4 Pages
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SBL3030PT–SBL3060PT
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25_C unless otherwise specified)
30
4000
24
Tj = 25°C
f = 1 MHz
18
1000
12
6
0
0
50
100
150
15378
Tamb – Ambient Temperature ( °C )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
100
SBL3030PT–SBL3045PT
10
SBL3050PT–SBL3060PT
1.0
15379
0.1
0.2
Tj = 25°C
Pulse Width = 300 µs
2% Duty Cycle
0.4
0.6
0.8
VF – Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
300
8.3 ms Single Half–Sine–Wave
JEDEC method
250
200
150
100
50
15380
0
1
10
100
Number of Cycles at 60 Hz
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
15381
100
0.1
1.0
10
100
VR – Reverse Voltage ( V )
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100
Tj = 100°C
10
Tj = 75°C
1.0
0.1 Tj = 25°C
0.01
0
40
80
120
15382
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
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