BR93LC46 Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

BR93LC46

1,024-Bit Serial Electrically Erasable PROM

ROHM Semiconductor 

Memory ICs

BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV

For low voltage operation (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)

Parameter

SK clock frequency

SK "H" time

SK "L" time

CS "L" time

CS setup time

DI setup time

CS hold time

DI hold time

Data "1" output delay time

Data "0" output delay time

Time from CS to output confirmation

Time from CS to output High impedance

Write cycle time

Symbol

fSK

tSKH

tSKL

tCS

tCSS

tDIS

tCSH

tDIH

tPD1

tPD0

tSV

tDF

tE / W

Min.

—

1

1

1

200

400

0

400

—

—

—

—

—

Typ. Max. Unit

— 250 kHz

—

— µs

—

— µs

—

— µs

—

— ns

—

— ns

—

— ns

—

— ns

—

2

µs

—

2

µs

—

2

µs

— 400 ns

—

25 ms

When reading at low voltage (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 2.0V)

Parameter

Symbol Min. Typ. Max.

Unit

SK clock frequency

fSK

—

—

200

kHz

SK "H" time

tSKH

2

—

—

µs

SK "L" time

tSKL

2

—

—

µs

CS "L" time

tCS

2

—

—

µs

CS setup time

tCSS

400

—

—

ns

DI setup time

tDIS

800

—

—

ns

CS hold time

tCSH

0

—

—

ns

DI hold time

tDIH

800

—

—

ns

Data "1" output delay time

tPD1

—

—

4

µs

Data "0" output delay time

tPD0

—

—

4

µs

Time from CS to output high impedance tDF

—

—

800

ns

᭺ Not designed for radiative rays.

5

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