KSC13003H Ver la hoja de datos (PDF) - Semihow
Número de pieza
componentes Descripción
Fabricante
KSC13003H Datasheet PDF : 4 Pages
| |||
KSC13003H
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
900
530
9
1.5
3
0.75
20
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
1.5 Amperes
NPN Silicon Power Transistor
20 Watts
TO-126
1. Base
2. Collector
3. Emitter
1
2
3
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
VCEO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
ton
tstg
tF
IC=5mA, IB=0
VEB=9V,IC=0
VCE=2V,IC=0.5A
VCE=2V,IC=1A
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
IC=1.5A,IB=0.5A
IC=0.5A,IB=0.1A
IC=1A,IB=0.25A
VCB=10V, f=0.1MHz
VCE=10V,IC=0.1A
Vcc=125V, Ic=2A
IB1=0.2A, IB2= -0.2A
RL=125Ω
Min Typ. Max Unit
400
V
10
㎂
9
40
5
0.5
V
1
V
3
V
1
V
1.2
V
21
㎊
4
㎒
1.1
㎲
4.0
㎲
0.7
㎲
Note.
R
hFE1
O
Classification
Y
20 ~ 30
25 ~ 35
35 ~ 40
Package Mark information.
S YWW Z
KSC13003H
S
YWW
Z
SemiHow symbol
Y; year code, WW; week code
hFE1 Classification
◎ SEMIHOW REV.A1,Oct 2007
Share Link: 