MAC320-10 Ver la hoja de datos (PDF) - Digitron Semiconductors
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MAC320-10 Datasheet PDF : 4 Pages
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DIGITRON SEMICONDUCTORS
MAC320(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, ½ sine wave, 50 to 60Hz, gate open)
MAC320-4, MAC320A-4
MAC320-6, MAC320A-6
MAC320-8, MAC320A-8
MAC320-10, MAC320A-10
VDRM
200
Volts
400
600
800
Peak gate voltage
VGM
10
Volts
RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 75°C)
IT(RMS)
20
Amps
Peak non-repetitive surge current
(1 cycle, 60Hz, TC = 75°C, preceded and followed by rated current)
ITSM
Amps
150
Peak gate power (TC = 75°C, t ≤ 2µs)
PGM
20
Watts
Average gate power (TC = 75°C, t ≤ 8.3ms)
PG(AV)
0.5
Watts
Peak gate current
IGM
2
Amps
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
1.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol Min Typ. Max Unit
Peak blocking current
(VD = Rated VDRM, gate open, TJ = 25°C)
(VD = Rated VDRM, gate open, TJ = 125°C)
IDRM
-
-
10
µA
-
-
2
mA
Peak on-state voltage (either direction)
(ITM = 28A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.)
VTM
Volts
-
1.4
1.7
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
IGT
mA
-
-
50
-
-
75
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(VD = Rated VDRM, RL = 10kΩ, TJ = 110°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
-
0.9
2.0
VGT
-
1.4
2.5 Volts
0.2
-
-
0.2
-
-
Holding current (either direction)
(VD = 12V, ITM = 200mA, gate open)
IH
mA
-
6
40
Gate controlled turn-on time
(VD = Rated VDRM, ITM = 28A, IG = 120mA, rise time = 0.1µs, pulse width = 2µs)
tgt
µs
-
1.5
-
Critical rate of rise of commutation voltage
(VD = Rated VDRM, ITM = 28A peak, commutating di/dt = 10A/ms, gate unenergized,
TC = 75°C)
dv/dt(c)
V/µs
-
5
-
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130213
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