XP132A0265SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

Número de pieza

componentes Descripción

Fabricante

XP132A0265SR

Power MOS FET

TOREX SEMICONDUCTOR 

XP132A0265SR

CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

10000

Vgs=0V, f=1MHz

SWITCHING TIME vs. DRAIN CURRENT

1000

Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≤1%

11

1000

100

0

Ciss

Coss

Crss

-5

-10

-15

-20

Drain-Source Voltage:Vds (V)

tf

100

td（off）

td（on）,tr

10

-0.1

-1

-10

Drain Current:Id (A)

GATE-SOURCE VOLTAGE vs. GATE CHARGE

Vds=-10V, Id=-3A

-10

REVERSE DRAIN CURRENT

vs. SOURCE-DRAIN VOLTAGE

Pulse Test

-20

-8

-6

-4

-2

0

0

10

20

30

40

50

Gate Charge:Qg (nc)

-15

Vgs＝-5V

-10

-2.5V

0.5V

-5

0

0

-0.2

-0.4

-0.6

-0.8

-1

Source-Drain Voltage:Vsd (V)

STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH

Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)

10

1

Single Pulse

0.1

0.01

0.001

0.0001

0.0001

0.001

0.01

0.1

1

Pulse Width:PW (sec)

10

100

754

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