XP132A0265SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

Número de pieza

componentes Descripción

Fabricante

XP132A0265SR

Power MOS FET

TOREX SEMICONDUCTOR 

XP132A0265SR

■Typical Performance Characteristics

DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE

-20

-3.5V

-4V

-4.5V

-15

Pulse Test, Ta=25:

-3V

-5V

-2.5V

-10

-2V

-5

Vgs＝-1.5V

0

0

-1

-2

-3

Drain-Source Voltage:Vds (V)

DRAIN CURRENT vs. GATE-SOURCE VOLTAGE

Pulse Test, Vds=-10V

-20

-15

-10

-5

125℃

Topr＝25℃

-55℃

0

0

-1

-2

-3

-4

-5

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. GATE-SOURCE VOLTAGE

Pulse Test, Ta=25:

0.20

DRAIN-SOURCE ON-STATE RESISTANCE

vs. DRAIN CURRENT

Pulse Test, Ta=25:

1.00

0.15

-6A

Id＝-3A

0.10

0.05

Vgs＝-2.5V

0.10

-5V

0.00

0

-2

-4

-6

-8

-10

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. AMBIENT TEMPERATURE

Pulse Test

0.20

0.15

Id＝−6A

-2.5V

0.10

-3A

-3A,-6A

0.05

Vgs＝-5V

0.00

-60 -30

0

30 60 90 120 150

Ambient Temp.:Topr (:)

0.01

0

-5

-10

-15

-20

Drain Current:Id (A)

GATE-SOURCE CUT-OFF VOLTAGE VARIANCE

vs. AMBIENT TEMPERATURE

11

Vds=-10V, Id=-1mA

0.6

0.4

0.2

0.0

-0.2

-0.4

-0.6

-60

-30

0

30 60 90

Ambient Temp.:Topr (:)

120 150

753

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