XP132A0265SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
XP132A0265SR Datasheet PDF : 4 Pages
| |||
XP132A0265SR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=-20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=-1mA, Vds=-10V
Id=-3A, Vgs=-5V
Id=-3A, Vgs=-2.5V
Id=-3A, Vds=-10V
If=-6A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
-10
µA
±10
µA
-0.5
V
0.055
0.065
Ω
0.09
0.12
Ω
8
S
-0.85
1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
Ta=25:
MIN
TYP
MAX
UNITS
1100
pF
600
pF
220
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=-5V, Id=-3A
Vdd=-10V
Ta=25:
MIN
TYP
MAX
UNITS
15
ns
15
ns
50
ns
30
ns
11 Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
(channel-ambience)
Rth (ch-a)
Implement on a glass epoxy
resin PCB
50
˚C/W
752
Share Link: 