75N08 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

75N08

N-Channel MOSFET Transistor

TY Semiconductor 

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MMOOSSFFIICCEETT

Product specification

75N08

■ Electrical Characteristics Ta = 25℃

P aram ete r

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

S y mbo l

Te st co ndi tons

V(BR)DSS VGS = 0V, ID = 250µA

RDS(on) VGS = 10V, ID = 30A

VGS(th) VDS = VGS, ID = 250µA

gfs

VDS = 15V, ID = 30A

IDSS

IGSS

VDS = 60V, VGS = 0V

VDS =60V, VGS = 0V, TJ = 125℃

VGS = 20V

VGS = -20V

Qg

Qgs

VDS = 30 V, VGS = 10 V, ID = 75 A

Qg d

td(on)

tr

td(off)

VDD = 30V，RL=0.47Ω，

ID=75A,VGEN=10V RG=2.5 Ω

tf

Ciss

C oss

VGS= 0 V, VDS = 25 V, f = 1 MHz

Crss

Continuous Source Current（Body Diode)

IS

Pulsed Source Current （Body Diode) *1

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

*1 Pulse width ≤ 300μs; duty cycle ≤ 2%.

*2 Repetitive rating; pulse width limited bymax

I SM

VSD

trr

Qrr

TJ = 25℃, IF = 75A, VGS = 0V*1

TJ = 25℃, IF = 75A

di/dt = 100A/µs*1

Min Typ Max Unit

75

V

0.009 Ω

1

3

V

30

S

1

µA

50

1 00

nA

-10 0

121 150

20

nC

25

11

20

10

20

ns

107 200

22

40

560 0

82 0

pF

27 5

75

A

2 40

1.3

V

80 120 ns

0.32 0.54 uC

■ Marking

Marking

75N08

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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