HN58X25128FPIAG Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HN58X25128FPIAG

Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit)/256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

Renesas Electronics 

HN58X25128IAG/HN58X25256IAG

Block Diagram

VCC

VSS

S

W

C

HOLD

D

Q

High voltage generator

Memory array

Y-select & Sense amp.

Serial-parallel converter

Absolute Maximum Ratings

Parameter

Symbol

Supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range*1

VCC

VIN

Topr

Storage temperature range

Tstg

Notes: 1. Including electrical characteristics and data retention.

2. VIN (min): −3.0 V for pulse width ≤ 50 ns.

3. Should not exceed VCC + 1.0 V.

DC Operating Conditions

Parameter

Symbol

Min

Supply voltage

Input voltage

Operating temperature range

VCC

VSS

VIH

VIL

Topr

1.8

0

VCC × 0.7

−0.3*1

−40

Notes: 1. VIN (min): −1.0 V for pulse width ≤ 50 ns.

2. VIN (max): VCC + 1.0 V for pulse width ≤ 50 ns.

Value

Unit

−0.6 to + 7.0

V

−0.5*2 to +7.0*3

V

−40 to +85

°C

−65 to +125

°C

Typ

Max

Unit



5.5

V

0

0

V



VCC + 0.5*2

V



VCC × 0.3

V



+85

°C

Rev.1.00, Nov.30.2006, page 3 of 20

Share Link: