HN58X25128 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HN58X25128

Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit)/256k EEPROM (32-kword × 8-bit)

Renesas Electronics 

HN58X25128FPIAG/HN58X25256FPIAG

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range*1

VCC

−0.6 to + 7.0

V

Vin

−0.5*2 to +7.0

V

Topr

−40 to +85

°C

Storage temperature range

Tstg

−55 to +125

°C

Notes: 1. Including electrical characteristics and data retention.

2. Vin (min): −3.0 V for pulse width ≤ 50 ns.

DC Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Supply voltage

VCC

1.8

⎯

5.5

V

VSS

0

0

0

V

Input voltage

VIH

VCC × 0.7

⎯

VCC + 0.5

V

VIL

−0.3*1

⎯

VCC × 0.3

V

Operating temperature range

Topr

−40

⎯

+85

°C

Note: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns.

Capacitance

(Ta = +25°C, f = 1 MHz)

Parameter

Symbo Min

Typ

Max

Unit

Test conditions

l

Input capacitance (D,C, S, W ,HOLD)

Cin*1

⎯

⎯

6.0

pF Vin = 0 V

Output capacitance (Q)

CI/O*1

⎯

⎯

8.0

pF Vout = 0 V

Note: 1.Not 100% tested.

Memory cell characteristics

Endurance

Data retention

Note: 1. Not 100% tested.

Ta=25°C

1,000k Cycles min.

100 Years min.

Ta=85°C

100k Cycles min

10 Years min.

(VCC = 1.8 V to 5.5 V)

Notes

1

1

R10DS0225EJ0200 Rev.2.00

Nov 29, 2013

Page 3 of 19

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