HMC318MS8G(V00) Ver la hoja de datos (PDF) - Hittite Microwave

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componentes Descripción

Fabricante

HMC318MS8G
(Rev.:V00)

GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz

Hittite Microwave 

MICROWAVE CORPORATION

v00.0900

HMC318MS8G

GaAs MMIC LOW NOISE AMPLIFIER

with AGC, 5.0 - 6.0 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+7.0 Vdc

Control Voltage Range (Vctl)

-0.2 to Vdd

RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 9.76 mW/°C above 85 °C)

0.634 W

Thermal Resistance

(channel to ground paddle)

102 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Outline Drawing

Gain Control

8

Vctl (Vdc)

Gain State

Typical

Ictl (uA)

0

Maximum

25

Vdd

Minimum

25

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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